Lithographic apparatus and device manufacturing method

ABSTRACT

A method for correcting an exposure parameter of an immersion lithographic apparatus is provided. In the method, an exposure parameter is measured using a measuring beam projected through a liquid between the projection system and a substrate table of the immersion lithographic apparatus and offset is determined based on a change of a physical property impacting a measurement made using the measuring beam to at least partly correct the measured exposure parameter. Also, there is provided an apparatus and method to measure a height of an optical element connected to liquid between the projection system and the substrate table in the immersion lithographic apparatus.

This application is a continuation-in-part application of U.S. patentapplication Ser. No. 11/025,603, filed Dec. 30, 2004, now abandoned thecontent of which is herein incorporated in its entirety by reference.

FIELD

The invention relates to a lithographic apparatus and a method formanufacturing a device.

BACKGROUND

A lithographic apparatus is a machine that applies a desired patternonto a substrate, usually onto a target portion of the substrate. Alithographic apparatus can be used, for example, in the manufacture ofintegrated circuits (ICs). In that instance, a patterning device, whichis alternatively referred to as a mask or a reticle, may be used togenerate a circuit pattern to be formed on an individual layer of theIC. This pattern can be transferred onto a target portion (e.g.comprising part of, one, or several dies) on a substrate (e.g. a siliconwafer). Transfer of the pattern is typically via imaging onto a layer ofradiation-sensitive material (resist) provided on the substrate. Ingeneral, a single substrate will contain a network of adjacent targetportions that are successively patterned. Known lithographic apparatusinclude so-called steppers, in which each target portion is irradiatedby exposing an entire pattern onto the target portion at one time, andso-called scanners, in which each target portion is irradiated byscanning the pattern through a radiation beam in a given direction (the“scanning”-direction) while synchronously scanning the substrateparallel or anti-parallel to this direction. It is also possible totransfer the pattern from the patterning device to the substrate byimprinting the pattern onto the substrate.

It has been proposed to immerse the substrate in the lithographicprojection apparatus in a liquid having a relatively high refractiveindex, e.g. water, so as to fill a space between the final element ofthe projection system and the substrate. The point of this is to enableimaging of smaller features since the exposure radiation will have ashorter wavelength in the liquid. (The effect of the liquid may also beregarded as increasing the effective numerical aperture (NA) of thesystem and also increasing the depth of focus.) Other immersion liquidshave been proposed, including water with solid particles (e.g. quartz)suspended therein.

However, submersing the substrate or substrate and substrate table in abath of liquid (see, for example, U.S. Pat. No. 4,509,852, herebyincorporated in its entirety by reference) means that there is a largebody of liquid that must be accelerated during a scanning exposure. Thisrequires additional or more powerful motors and turbulence in the liquidmay lead to undesirable and unpredictable effects.

One of the solutions proposed is for a liquid supply system to provideliquid on only a localized area of the substrate and in between thefinal element of the projection system and the substrate (the substrategenerally has a larger surface area than the final element of theprojection system). One way which has been proposed to arrange for thisis disclosed in PCT patent application no. WO 99/49504, herebyincorporated in its entirety by reference. As illustrated in FIGS. 2 and3, liquid is supplied by at least one inlet IN onto the substrate,preferably along the direction of movement of the substrate relative tothe final element, and is removed by at least one outlet OUT afterhaving passed under the projection system. That is, as the substrate isscanned beneath the element in a −X direction, liquid is supplied at the+X side of the element and taken up at the −X side. FIG. 2 shows thearrangement schematically in which liquid is supplied via inlet IN andis taken up on the other side of the element by outlet OUT which isconnected to a low pressure source. In the illustration of FIG. 2 theliquid is supplied along the direction of movement of the substraterelative to the final element, though this does not need to be the case.Various orientations and numbers of in- and out-lets positioned aroundthe final element are possible, one example is illustrated in FIG. 3 inwhich four sets of an inlet with an outlet on either side are providedin a regular pattern around the final element.

SUMMARY

It would be advantageous, for example, to provide a method, apparatusand/or computer program product for correcting an exposure parameter ofan immersion lithographic apparatus.

According to an aspect of the invention, there is provided a method forcorrecting an exposure parameter of an immersion lithographic apparatus,the method comprising:

measuring an exposure parameter using a measuring beam projected througha liquid between the projection system and a substrate table of theimmersion lithographic apparatus; and

determining an offset based on a change of a physical property impactinga measurement made using the measuring beam to at least partly correctthe measured exposure parameter.

According to an aspect of the invention, there is provided alithographic apparatus, comprising:

a support structure configured to hold a patterning device, thepatterning device configured to impart a beam of radiation with apattern in its cross-section;

a substrate table configured to hold a substrate;

a projection system configured to project the patterned beam onto atarget portion of the substrate;

a liquid supply system configured to provide liquid to a space betweenthe projection system and the substrate table;

a sensor configured to measure an exposure parameter using a measuringbeam projected through the liquid; and

a correction system configured to determine an offset based on a changeof a physical property impacting a measurement made using the measuringbeam to at least partly correct the measured exposure parameter.

According to an aspect of the invention, there is provided a computerprogram product for correcting an exposure parameter of an immersionlithographic apparatus, comprising:

software code configured to measure an exposure parameter using ameasuring beam projected through a liquid between the projection systemand a substrate table of the immersion lithographic apparatus; and

software code configured to determine an offset based on a change of aphysical property impacting a measurement made using the measuring beamto at least partly correct the measured exposure parameter.

According to an aspect of the invention, there is provided alithographic apparatus, comprising:

a substrate table configured to hold a substrate;

a projection system configured to project a patterned beam onto a targetportion of the substrate, the projection system having an opticalelement;

a liquid supply system configured to provide liquid to a space betweenthe projection system and the substrate table, the optical elementconfigured to be connected to the liquid; and

a sensor configured to measure a height of the optical element.

According to an aspect of the invention, there is provided a method ofcorrecting for an imaging error of an immersion lithographic apparatus,comprising:

measuring a height of an optical element of a projection system in theimmersion lithographic apparatus, the optical element connected to aliquid between the projection system and a substrate table of theprojection system; and

at least partly correcting the image error by moving the opticalelement, moving the substrate table, or both.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will now be described, by way of exampleonly, with reference to the accompanying schematic drawings in whichcorresponding reference symbols indicate corresponding parts, and inwhich:

FIG. 1 depicts a lithographic apparatus according to an embodiment ofthe invention;

FIGS. 2 and 3 depict a liquid supply system for use in a lithographicprojection apparatus;

FIG. 4 depicts another liquid supply system for use in a lithographicprojection apparatus;

FIG. 5 depicts another liquid supply system for use in a lithographicprojection apparatus;

FIG. 6 schematically depicts passage of a radiation beam through anoptical element of the projection system of a lithographic apparatusaccording to an embodiment of the invention;

FIG. 7 depicts a flow chart of a method according to an embodiment ofthe invention;

FIG. 8 schematically depicts a sensor used to measure a height or changeof height of an optical element of the projection system of alithographic apparatus according to an embodiment of the invention; and

FIG. 9 schematically depicts a sensor used to measure a height or changeof height of an optical element of the projection system of alithographic apparatus according to an embodiment of the invention.

DETAILED DESCRIPTION

FIG. 1 schematically depicts a lithographic apparatus according to oneembodiment of the invention. The apparatus comprises:

-   -   an illumination system (illuminator) IL configured to condition        a radiation beam PB (e.g. UV radiation or DUV radiation);    -   a support structure (e.g. a mask table) MT constructed to        support a patterning device (e.g. a mask) MA and connected to a        first positioner PM configured to accurately position the        patterning device in accordance with certain parameters;    -   a substrate table (e.g. a wafer table) WT constructed to hold a        substrate (e.g. a resist-coated wafer) W and connected to a        second positioner PW configured to accurately position the        substrate in accordance with certain parameters; and    -   a projection system (e.g. a refractive projection lens system)        PL configured to project a pattern imparted to the radiation        beam PB by patterning device MA onto a target portion C (e.g.        comprising one or more dies) of the substrate W.

The illumination system may include various types of optical components,such as refractive, reflective, magnetic, electromagnetic, electrostaticor other types of optical components, or any combination thereof, fordirecting, shaping, or controlling radiation.

The support structure supports, i.e. bears the weight of, the patterningdevice. It holds the patterning device in a manner that depends on theorientation of the patterning device, the design of the lithographicapparatus, and other conditions, such as for example whether or not thepatterning device is held in a vacuum environment. The support structurecan use mechanical, vacuum, electrostatic or other clamping techniquesto hold the patterning device. The support structure may be a frame or atable, for example, which may be fixed or movable as required. Thesupport structure may ensure that the patterning device is at a desiredposition, for example with respect to the projection system. Any use ofthe terms “reticle” or “mask” herein may be considered synonymous withthe more general term “patterning device.”

The term “patterning device” used herein should be broadly interpretedas referring to any device that can be used to impart a radiation beamwith a pattern in its cross-section such as to create a pattern in atarget portion of the substrate. It should be noted that the patternimparted to the radiation beam may not exactly correspond to the desiredpattern in the target portion of the substrate, for example if thepattern includes phase-shifting features or so called assist features.Generally, the pattern imparted to the radiation beam will correspond toa particular functional layer in a device being created in the targetportion, such as an integrated circuit.

The patterning device may be transmissive or reflective. Examples ofpatterning devices include masks, programmable mirror arrays, andprogrammable LCD panels. Masks are well known in lithography, andinclude mask types such as binary, alternating phase-shift, andattenuated phase-shift, as well as various hybrid mask types. An exampleof a programmable mirror array employs a matrix arrangement of smallmirrors, each of which can be individually tilted so as to reflect anincoming radiation beam in different directions. The tilted mirrorsimpart a pattern in a radiation beam which is reflected by the mirrormatrix.

The term “projection system” used herein should be broadly interpretedas encompassing any type of projection system, including refractive,reflective, catadioptric, magnetic, electromagnetic and electrostaticoptical systems, or any combination thereof, as appropriate for theexposure radiation being used, or for other factors such as the use ofan immersion liquid or the use of a vacuum. Any use of the term“projection lens” herein may be considered as synonymous with the moregeneral term “projection system”.

As here depicted, the apparatus is of a transmissive type (e.g.employing a transmissive mask). Alternatively, the apparatus may be of areflective type (e.g. employing a programmable mirror array of a type asreferred to above, or employing a reflective mask).

The lithographic apparatus may be of a type having two (dual stage) ormore substrate tables (and/or two or more mask tables). In such“multiple stage” machines, the additional tables may be used inparallel, or preparatory steps may be carried out on one or more tableswhile one or more other tables are being used for exposure.

Referring to FIG. 1, the illuminator IL receives a radiation beam from aradiation source SO. The source and the lithographic apparatus may beseparate entities, for example when the source is an excimer laser. Insuch cases, the source is not considered to form part of thelithographic apparatus and the radiation beam is passed from the sourceSO to the illuminator IL with the aid of a beam delivery system BDcomprising, for example, suitable directing mirrors and/or a beamexpander. In other cases the source may be an integral part of thelithographic apparatus, for example when the source is a mercury lamp.The source SO and the illuminator IL, together with the beam deliverysystem BD if required, may be referred to as a radiation system.

The illuminator IL may comprise an adjuster AD for adjusting the angularintensity distribution of the radiation beam. Generally, at least theouter and/or inner radial extent (commonly referred to as σ-outer andσ-inner, respectively) of the intensity distribution in a pupil plane ofthe illuminator can be adjusted. In addition, the illuminator IL maycomprise various other components, such as an integrator IN and acondenser CO. The illuminator may be used to condition the radiationbeam, to have a desired uniformity and intensity distribution in itscross-section.

The radiation beam PB is incident on the patterning device (e.g., maskMA), which is held on the support structure (e.g., mask table MT), andis patterned by the patterning device. Having traversed the mask MA, theradiation beam PB passes through the projection system PL, which focusesthe beam onto a target portion C of the substrate W. An immersion hoodIH, which is described further below, supplies immersion liquid to aspace between the final element of the projection system PL and thesubstrate W.

With the aid of the second positioner PW and position sensor IF (e.g. aninterferometric device, linear encoder or capacitive sensor), thesubstrate table WT can be moved accurately, e.g. so as to positiondifferent target portions C in the path of the radiation beam PB.Similarly, the first positioner PM and another position sensor (which isnot explicitly depicted in FIG. 1) can be used to accurately positionthe mask MA with respect to the path of the radiation beam PB, e.g.after mechanical retrieval from a mask library, or during a scan. Ingeneral, movement of the mask table MT may be realized with the aid of along-stroke module (coarse positioning) and a short-stroke module (finepositioning), which form part of the first positioner PM. Similarly,movement of the substrate table WT may be realized using a long-strokemodule and a short-stroke module, which form part of the secondpositioner PW. In the case of a stepper (as opposed to a scanner) themask table MT may be connected to a short-stroke actuator only, or maybe fixed. Mask MA and substrate W may be aligned using mask alignmentmarks M1, M2 and substrate alignment marks P1, P2. Although thesubstrate alignment marks as illustrated occupy dedicated targetportions, they may be located in spaces between target portions (theseare known as scribe-lane alignment marks). Similarly, in situations inwhich more than one die is provided on the mask MA, the mask alignmentmarks may be located between the dies.

The depicted apparatus could be used in at least one of the followingmodes:

1. In step mode, the mask table MT and the substrate table WT are keptessentially stationary, while an entire pattern imparted to theradiation beam is projected onto a target portion C at one time (i.e. asingle static exposure). The substrate table WT is then shifted in the Xand/or Y direction so that a different target portion C can be exposed.In step mode, the maximum size of the exposure field limits the size ofthe target portion C imaged in a single static exposure.

2. In scan mode, the mask table MT and the substrate table WT arescanned synchronously while a pattern imparted to the radiation beam isprojected onto a target portion C (i.e. a single dynamic exposure). Thevelocity and direction of the substrate table WT relative to the masktable MT may be determined by the (de-)magnification and image reversalcharacteristics of the projection system PL. In scan mode, the maximumsize of the exposure field limits the width (in the non-scanningdirection) of the target portion in a single dynamic exposure, whereasthe length of the scanning motion determines the height (in the scanningdirection) of the target portion.

3. In another mode, the mask table MT is kept essentially stationaryholding a programmable patterning device, and the substrate table WT ismoved or scanned while a pattern imparted to the radiation beam isprojected onto a target portion C. In this mode, generally a pulsedradiation source is employed and the programmable patterning device isupdated as required after each movement of the substrate table WT or inbetween successive radiation pulses during a scan. This mode ofoperation can be readily applied to maskless lithography that utilizesprogrammable patterning device, such as a programmable mirror array of atype as referred to above.

Combinations and/or variations on the above described modes of use orentirely different modes of use may also be employed.

A further immersion lithography solution with a localized liquid supplysystem is shown in FIG. 4. Liquid is supplied by two groove inlets IN oneither side of the projection system PL and is removed by a plurality ofdiscrete outlets OUT arranged radially outwardly of the inlets IN. Theinlets IN and OUT can be arranged in a plate with a hole in its centerand through which the projection beam is projected. Liquid is suppliedby one groove inlet IN on one side of the projection system PL andremoved by a plurality of discrete outlets OUT on the other side of theprojection system PL, causing a flow of a thin film of liquid betweenthe projection system PL and the substrate W. The choice of whichcombination of inlet IN and outlets OUT to use can depend on thedirection of movement of the substrate W (the other combination of inletIN and outlets OUT being inactive).

Another immersion lithography solution with a localized liquid supplysystem solution which has been proposed is to provide the liquid supplysystem with a liquid confinement structure which extends along at leasta part of a boundary of the space between the final element of theprojection system and the substrate table. Such a solution isillustrated in FIG. 5. The liquid confinement structure is substantiallystationary relative to the projection system in the XY plane thoughthere may be some relative movement in the Z direction (in the directionof the optical axis). See, for example, U.S. patent application Ser. No.10/844,575, hereby incorporated in its entirety by reference. A seal isformed between the liquid confinement structure and the surface of thesubstrate.

Referring to FIG. 5, reservoir 10 forms a contactless seal to thesubstrate around the image field of the projection system so that liquidis confined to fill a space between the substrate surface and the finalelement of the projection system. The reservoir is formed by a liquidconfinement structure 12 positioned below and surrounding the finalelement of the projection system PL. Liquid is brought into the spacebelow the projection system and within the liquid confinement structure12. The liquid confinement structure 12 extends a little above the finalelement of the projection system and the liquid level rises above thefinal element so that a buffer of liquid is provided. The liquidconfinement structure 12 has an inner periphery that at the upper end,in an embodiment, closely conforms to the shape of the projection systemor the final element thereof and may, e.g., be round. At the bottom, theinner periphery closely conforms to the shape of the image field, e.g.,rectangular though this need not be the case.

The liquid is confined in the reservoir by a gas seal 16 between thebottom of the liquid confinement structure 12 and the surface of thesubstrate W. The gas seal is formed by gas, e.g. air or synthetic airbut, in an embodiment, N₂ or another inert gas, provided under pressurevia inlet 15 to the gap between liquid confinement structure 12 andsubstrate and extracted via first outlet 14. The overpressure on the gasinlet 15, vacuum level on the first outlet 14 and geometry of the gapare arranged so that there is a high-velocity gas flow inwards thatconfines the liquid. Such a system is disclosed in U.S. patentapplication Ser. No. 10/705,783, hereby incorporated in its entirety byreference.

In an embodiment, to facilitate imaging of the substrate, the levelingand alignment of the substrate may be performed at an exposure positionof the substrate. In other words, a substrate level sensor (used tofacilitate focus of a patterned projection beam on the substrate) and asubstrate alignment sensor (used to facilitate proper lateralpositioning of the substrate relative to the patterned projection beam)are provided around the projection system and/or the substratepositioned adjacent the projection system, so that the substrate can bemeasured when the substrate moves relative to and near the projectionsystem during exposure. In an immersion lithography apparatus, with thestructure used to provide or maintain liquid between the projectionsystem and the substrate, the amount of physical space remaining topermit the provision or operation of one or both of those sensors isvery limited. Such space may be even more at a premium with largerprojection systems such as those having high numerical apertures (NA),such as about 1.3. Therefore, according to an embodiment, where thelevel sensor and/or the alignment sensor use a measuring radiation beam,the measuring radiation beam may wholly or partly pass through theprojection system.

FIG. 6 schematically depicts passage of a patterned projection beam anda measuring beam through an optical element of the projection system ofan immersion lithographic apparatus according to an embodiment of theinvention. A portion of an example projection system PL is shown. Liquid11 is disposed between the projection system PL and the substrate W. Apatterned projection beam 20 is shown as entering the portion of theprojection system PL at two points (although as will be apparent, theseare just 2 rays representative of a wave). The patterned projection beam20 passes through the portion of the projection system PL, then throughthe liquid 11, and is focused onto the substrate W.

In this example, an incoming level sensor measuring beam 22 (e.g.,provided by one or more laser sources, light emitting diodes, (halogen)lamps, etc.) is shown entering the portion of the projection system PL.The measuring beam passes through the portion of the projection systemPL and then through the liquid 11 onto the substrate. The measuring beamreflects off the substrate W and then passes, as an outgoing levelsensor measuring beam 24, through the liquid 11 and the portion of theprojection system PL out to a level sensor detector (not shown). While alevel sensor measuring beam is shown and described in FIG. 6, themeasuring beam may instead or additionally be an alignment sensormeasuring beam or any other measuring beam.

While the patterned projection beam 20 and the level sensor measuringbeam 22,24 are shown as focused at substantially the same point on thesubstrate to facilitate accurate leveling/focus measurements, the beamsneed not be focused at the substantially same point. For example, thelevel sensor measuring beam 22,24 may be focused at a position inadvance of where the patterned projection beam 20 will be focused sothat leveling/focusing calculations and adjustments can be made inadvance of the patterned beam projection beam 20 impinging the substrateW. Where the measuring beam 22, 24 is, for example, an alignment beam,the measuring beam 22, 24 may be focused at a different position, forexample, at an alignment mark, than the patterned projection beam 20.

Since a measuring beam should not expose the radiation sensitivematerial of the substrate W, the wavelength of the radiation used forthe measuring beam is selected not to expose the radiation sensitivematerial and thus is typically different than the wavelength of theradiation of the patterned projection beam. For example, in the case ofa level sensor measuring beam, for rough capturing, HeNe laser radiationmay be used for the measuring beam, but to reduce thin film effects,broad band radiation should be used instead or in addition.

However, in the case of level sensor, for example, using a differentwavelength for the measuring beam than for the patterned projectionbeam, there will likely be a difference in the focus detected by thelevel sensor passing its measuring beam through the projection systemfrom an actual focus associated with the patterned projection beampassing through the same projection system. This is because one or moreprojection system characteristics (such as refractive index) vary withwavelength. Thus, a change of refractive index somewhere in the opticalpath of the measuring beam (having a certain wavelength) may cause adetected focus to differ from an actual focus associated with thepatterned projection beam (having a different wavelength). In additionor alternatively, other measurement results using a measuring beam, suchas alignment, could similarly be affected. For example, in the case ofan alignment beam, the actual lateral position of the patternedprojection beam on the substrate may be different from the expectedlateral position of the patterned beam as determined by an alignmentmeasurement using an alignment measuring beam projected on an alignmentmark on the substrate.

A change of the refractive index in the optical path of the measuringbeam may occur in any number of ways. Examples include:

-   -   temperature change of the liquid and/or the optical element        through which the measuring beam passes;    -   pressure change of the liquid and/or the optical element through        which the measuring beam passes;    -   composition change of the liquid (e.g., contamination); and    -   pressure and/or temperature change in a flushing gas used to        condition the measuring beam path into and/or out of the        projection system.

Furthermore, a difference between a value measured using a measuringbeam and an actual value associated with a patterned projection beam mayalso result from one or more other changes. For example, a change in thewavelength of the patterned projection beam may cause a measurement madeusing a measuring beam to be inaccurate. Similarly, a change in thewavelength of the measuring beam may cause a measurement made using thatmeasuring beam to be inaccurate. Furthermore, movement (manipulation) ofone or more optical elements in the projection system or substrateheight movement may cause a difference between a value measured using ameasuring beam and an actual value associated with a patternedprojection beam.

Accordingly, in an embodiment, a metrology model/method is implementedto correct for the difference between an exposure parameter valuemeasured using a measuring beam and an applied exposure parameter valueassociated with a patterned projection beam attributable to thedifference in wavelength of the measuring beam and the projection beam.

FIG. 7 depicts a schematic flow chart of the metrology method accordingto an embodiment of the invention.

At step 30, one or more sensors 26 measure one or more of the physicalproperty changes as described above at or near the time the measuringbeam measures an exposure parameter P (such as focus, substrate height,and/or alignment). For example, a pressure sensor may measure thepressure of the liquid, flushing gas and/or optical element throughwhich the measuring beam passes. Additionally or alternatively, atemperature sensor may measure the temperature of the liquid, flushinggas and/or optical element through which the measuring beam passes. Inan embodiment, multiple different types of measurements may be made(e.g., pressure and temperature measurement) and/or multiplemeasurements of the same type may be made (e.g., multiple pressuremeasurements). The number of measurements are designated by the symbolj. The one or more measured physical property values may then bedenominated as array X_j. In an embodiment, one or more sensors providea measured physical property value as a difference with respect to anominal value, e.g., at which the lithographic apparatus was optimallyadjusted. For example, a temperature sensor may provide the differencebetween the actual temperature measured (e.g., 22.3° C.) and a nominaltemperature at which the lithographic apparatus was optimally adjusted.(e.g., 22.1° C.) as the temperature measurement (i.e., 0.2° C.). In anembodiment, it will be appreciated that the method may be extended tosituations where a nominal value (i.e., calibration) has not beenestablished through the use of additional calculations and/ormeasurements.

At step 32, the impact of the one or more measured physical propertyvalues X_j on the exposure parameter P is determined or obtained. Thisimpact may be designated as the derivative dP/dX_j. For example, wherethe exposure parameter P is focus and the measured physical propertyvalues X_j are temperature and pressure of the immersion liquid, dP/dX_jmay represent the rate of change of focus with respect to temperatureand pressure.

In an embodiment, dP/dX_j may be determined at, before or after step 32.In other words, dP/dX_j may be determined off-line, i.e., before themeasuring beam measures the exposure parameter P, or on-line, i.e., ator near the time the measuring beam measures the exposure parameter P.In an embodiment, dP/dX_j may be determined by experiment/calibration,from empirical results, and/or by optical theory (e.g., optical raytracing). For example, dP/dX_j may be calculated from the application ofmaterials values (such as a table of values for a particular physicalproperty at different conditions, e.g., the refractive index of amaterial at various temperatures) to relevant physics and/ormathematical formulas. In another example, dP/dX_j may be determined byexperimental measurement. Furthermore, dP/dX_j may be determined formultiple exposure and/or measuring beam wavelengths and may be adifference between the value for the exposure beam wavelength and themeasuring beam wavelength. Additionally or alternatively, dP/dX_j may bedetermined per projection system type (e.g., a projection system used inmultiple lithographic apparatus) or individually per specific projectionsystem in a lithographic apparatus.

At step 34, the measured exposure parameter P is corrected at least inpart to take account of the measured physical property values X_j. In anembodiment, this correction may be formulated as:P_applied=P_measured−sum(j){X _(—) j*dP/dX _(—) j}where P_applied is the exposure parameter to be applied, for example,during exposure of the substrate by a patterned projection beam andP_measured is the exposure parameter as measured using the measuringbeam. Thus, the term “sum (j) (X_j*dP/dX_j)” is the cumulative offset tobe applied to the measured exposure parameter to obtain an exposureparameter to be applied, for example, during exposure of the substrate.The cumulative offset is the sum of the respective offsets attributableto each of the measured physical values X_j. Matrix operations may beused for the correction so as to address possible cross terms betweencertain physical properties, such as projection system manipulator andenvironmental (e.g., temperature, pressure) dependencies. Thedetermination and/or application of the exposure parameter to be appliedmay be performed continuously or at intermittent times.

So, in an example, a level sensor may project a measuring beam throughan optical element of the projection system of a lithographic apparatusand through an immersion liquid to measure a height of the substrateF_measured during exposure of the substrate, the measured heightcorresponding to a focus for the patterned projection beam. Thismeasured height (and thus focus) may then be corrected to take accountof the temperature (X_1) and pressure (X_2) of the immersion liquid toyield a corrected height F_applied (and thus focus) to be applied duringexposure of the substrate. A corrective function of the focus withrespect to the temperature (dF/dX_1) and pressure (dF/dX_2) is provided(e.g., by experiment or empirical results). The corrective function isthen multiplied with the measured values of the pressure and temperatureand added together (sum(j) {X_j*dF/dX_j}) to yield a cumulative offsetto be applied to the measured height to yield the corrected height (andthus corrected focus). This may be summarized by the formulaF_applied=F_measured−sum(j) {X_j*dF/dX_j}.

In another example, an alignment sensor may project a measuring beamthrough an optical element of the projection system of a lithographicapparatus and through an immersion liquid to measure a X-Y position ofthe substrate LP_measured during exposure of the substrate, the measuredX-Y position corresponding to a lateral placement of the patternedprojection beam. This measured X-Y position (and thus lateral placement)may then be corrected to take account of the temperature (X_1) andpressure (X_2) of the immersion liquid to yield a corrected X-Y positionLP_applied (and thus lateral placement) to be applied during exposure ofthe substrate. A corrective function of the lateral placement withrespect to the temperature (dLP/dX_1) and pressure (dLP/dX_2) isprovided (e.g., by experiment or empirical results). The correctivefunction is then multiplied with the measured values of the pressure andtemperature and added together (sum(j){X_j*dLP/dX_j}) to yield acumulative offset to be applied to the measured X-Y position to yieldthe corrected X-Y position (and thus corrected lateral placement). Thismay be summarized by the formulaLP_applied=LP_measured−sum(j){X_j*dLP/dX_j}.

In an embodiment, the measured exposure parameter may be specificallycorrected for the wavelength of the measuring beam and of the exposurebeam to yield the exposure parameter to be applied. For example, thismay be formulated as:P_applied=P_measured−Δ(MV)*(dP/dMV(measuring beamwavelength)−dP/dMV(exposure wavelength))where P_applied is the exposure parameter, such as focus or lateralplacement, to be applied, for example, during exposure of the substrateby a patterned projection beam, P_measured is the exposure parameter asmeasured using the measuring beam, Δ(MV) is the difference in themeasured physical property value, such as temperature or pressure, froma nominal value (typically a value at which the lithographic apparatuswas optimally configured), dP/dMV (measuring beam wavelength) is therate of change of the exposure parameter with respect to the measuredphysical property value for the measuring beam wavelength, anddP/dMV(exposure wavelength) is the rate of change of the exposureparameter with respect to the measured physical property value for themeasuring beam wavelength.

A lithographic apparatus may have various constants defined to providegood or optimal performance. For example, the lithographic apparatus mayhave one or more constants associated with the projection system such aspositioning of one or more optical elements in the projection systemand/or one or more constants associated with the alignment system suchas alignment mark configuration and/or location. In embodiment, themetrology model may be implemented to correct for the wavelengthdependency of these constants. In other words, one or measured physicalproperty values, such as pressure and/or temperature, may be used inassociation with, for example, a rate of change of the constant relativeto the measured value or a rate of change of a relevant exposureparameter relative to the measured value (e.g. dalignment/dtemperatureor dfocus/dpressure) to yield a corrected constant.

To implement the method described above, a correction system may beprovided to a lithographic apparatus which is configured or programmedto perform an embodiment of the method as described herein. Thecorrection system may be a computer program incorporated into aprocessor or sensor of the lithographic apparatus. Further, a computerprogram product (e.g., a software program on a disk or in a memory) maybe provided to perform an embodiment of the method as described herein.

In an embodiment, the last optical element of the projection system isstiff mounted to the rigid body of the remainder of the projectionsystem (e.g., lens body). Due to static forces (immersion liquid heightand/or over pressure difference of the projection system) and dynamicforces (immersion liquid flow and/or dynamic environmental pressurechange), the last optical element may change in height. In an immersionlithography system, this may lead to a change of the optical path which,between alignment measurements, may lead to mainly focus and/orspherical aberration drift. For a projection system NA of 0.75, 193 nmradiation and water as the immersion liquid, the sensitivity may be ˜1nm defocus and 9 pm Z9 drift per nm Z-displacement. With a stiffness of5×10⁶ and a maximum allowable Z9 drift of 0.5 nm, this could lead to amaximum force of 0.3N on the optical element connected to the liquid—aforce that may occur in an immersion lithographic apparatus.

Thus, in an embodiment, a sensor may be provided to measure a height ofan optical element configured to be connected to the liquid (e.g., thelast optical element of the projection system). In an embodiment, thesensor may be implemented as part of an existing level sensor providedto measure a height (e.g. with respect to the last optical element ofthe projection system) of the substrate or of another object such as thesubstrate table, including any sensor, fiducial, etc. In an embodiment,the sensor may be a separate sensor, from the level sensor, for thispurpose.

In an embodiment, the sensor to measure a height of the optical elementis an optical sensor configured to detect a measuring beam travelingfrom the optical element to measure the height of the optical elementand optionally to project the measuring beam at the optical element.Referring to FIG. 8, an arrangement for the optical sensor 46 isschematically depicted. An incoming measuring beam 40 (e.g., provided byone or more laser sources, light emitting diodes, (halogen) lamps, etc.)is shown directed at the optical element OE, which optical element isconnected to the liquid 11. The measuring beam reflects off a topsurface of the optical element OE, as an outgoing measuring beam 42, tothe sensor detector 46, which is used to determine the height of theoptical element. In an embodiment, the measuring beam is a level sensormeasuring beam although it may instead or additionally be an alignmentsensor measuring beam or any other measuring beam. In an embodiment, themeasuring beam may be reflected off a bottom surface of the opticalelement OE (e.g., the surface that is the interface between the opticalelement OE and the liquid 11). When reflected off the bottom surface,the beam may pass through the top surface of the optical element OE tothe bottom surface, where the beam is reflected toward and out the topsurface. Alternatively, the beam may be projected directly onto thebottom surface by, e.g., a beam emanating or reflected from below theoptical element OE.

In an embodiment, the sensor may be configured as part of a level sensor46 used to measure the height of the substrate (or other object). Anincoming level sensor measuring beam 40 (e.g., provided by one or morelaser sources, light emitting diodes, (halogen) lamps, etc.) is shownentering the optical element OE. The measuring beam passes through theoptical element OE and then through the liquid 11 onto the substrate (orother object). The measuring beam reflects off the substrate (or otherobject) and then passes, as an outgoing level sensor measuring beam 44,through the liquid 11 and the optical element OE out to a level sensordetector 46. A portion of the incoming level sensor measuring beam 40reflects off a top surface of the optical element OE, as an outgoingmeasuring beam 44, to the sensor detector 46. Alternatively, theincoming measuring beam used to create the outgoing measuring beam 44could be directed at a different angle or have a different wavelength inorder to cause it to reflect off the optical element OE. The outgoinglevel sensor measuring beam 42 and the outgoing measuring beam 44created an interference area. By analyzing the fringes of theinterference area, the difference in height in between the substrate (orthe object) and the optical element can be detected or determined andthus the change in height of the optical element can be determined.

In an alternative or additional embodiment, the sensor may be amechanical, ultrasonic, magnetic and/or electrical sensor to measure theheight or change in height of the optical element. Referring to FIG. 9,sensor 46 is a mechanical, ultrasonic, magnetic and/or electrical sensorused to measure a height of the optical element OE.

In each case, the measured height from the sensor may be used to atleast partly correct for a change in the measured height of the opticalelement. In an embodiment, a signal may be sent from the sensor 46 to aservo system 50 which controls a positioning system PW of the substratetable WT so that the height of substrate (or other object) can beadjusted to at least partly correct for the change in measured height ofthe optical element. Additionally or alternatively, a signal may be sentto a servo system 50 used to control the position of the optical elementheight so that the height of the optical element can be adjusted to atleast partly correct for the change in measured height of the opticalelement.

Through this mechanism, focus and spherical aberration caused bychanging forces on the optical element of the projection systemconnected to the liquid may be stabilized and/or reduced.

For further clarity, the term height includes change in height and mayinclude tilt. Additionally, while the concepts herein have beendescribed in the context of a lithography apparatus, they might equallybe applied to other apparatus that use a liquid between an opticalelement and surface of an object. For example, the concepts herein maybe applied to an immersion metrology apparatus that uses a beam ofradiation projected through a liquid to measure characteristics of anobject.

In European Patent Application No. 03257072.3, the idea of a twin ordual stage immersion lithography apparatus is disclosed. Such anapparatus is provided with two tables for supporting a substrate.Leveling measurements are carried out with a table at a first position,without immersion liquid, and exposure is carried out with a table at asecond position, where immersion liquid is present. Alternatively, theapparatus has only one table. In a preferred embodiment, the apparatus,method and/or computer program product as described herein is applied toa single stage/table lithography apparatus.

Although specific reference may be made in this text to the use oflithographic apparatus in the manufacture of ICs, it should beunderstood that the lithographic apparatus described herein may haveother applications, such as the manufacture of integrated opticalsystems, guidance and detection patterns for magnetic domain memories,flat-panel displays, liquid-crystal displays (LCDs), thin-film magneticheads, etc. The skilled artisan will appreciate that, in the context ofsuch alternative applications, any use of the terms “wafer” or “die”herein may be considered as synonymous with the more general terms“substrate” or “target portion”, respectively. The substrate referred toherein may be processed, before or after exposure, in for example atrack (a tool that typically applies a layer of resist to a substrateand develops the exposed resist), a metrology tool and/or an inspectiontool. Where applicable, the disclosure herein may be applied to such andother substrate processing tools. Further, the substrate may beprocessed more than once, for example in order to create a multi-layerIC, so that the term substrate used herein may also refer to a substratethat already contains multiple processed layers.

The terms “radiation” and “beam” used herein encompass all types ofelectromagnetic radiation, including ultraviolet (UV) radiation (e.g.having a wavelength of or about 365, 248, 193, 157 or 126 nm).

The term “lens”, where the context allows, may refer to any one orcombination of various types of optical components, including refractiveand reflective optical components.

While specific embodiments of the invention have been described above,it will be appreciated that the invention may be practiced otherwisethan as described. For example, where applicable, an embodiment of theinvention may take the form of a computer program containing one or moresequences of machine-readable instructions describing a method asdisclosed above, or a data storage medium (e.g. semiconductor memory,magnetic or optical disk) having such a computer program stored therein.For example, the metrology model/method may be implemented as a computerprogram and the computer program may interact with the lithographicapparatus to obtain measured data (e.g., obtain a measured focus fromone or more level sensors of the lithographic apparatus and/or obtain ameasured lateral placement from one or more alignment sensors of thelithographic apparatus) and return corrected data (e.g., return themeasured focus as corrected to account for the different wavelength ofthe level sensor(s) measuring beam and/or return the measured lateralplacement as corrected to account for the different wavelength of thealignment sensor(s) measuring beam).

One or more embodiments of the invention may be applied to any immersionlithography apparatus, in particular, but not exclusively, those typesmentioned above and whether the immersion liquid is provided in the formof a bath or only on a localized surface area of the substrate. A liquidsupply system as contemplated herein should be broadly construed. Incertain embodiments, it may be a mechanism or combination of structuresthat provides a liquid to a space between the projection system and thesubstrate and/or substrate table. It may comprise a combination of oneor more structures, one or more liquid inlets, one or more gas inlets,one or more gas outlets, and/or one or more liquid outlets that provideliquid to the space. In an embodiment, a surface of the space may be aportion of the substrate and/or substrate table, or a surface of thespace may completely cover a surface of the substrate and/or substratetable, or the space may envelop the substrate and/or substrate table.The liquid supply system may optionally further include one or moreelements to control the position, quantity, quality, shape, flow rate orany other features of the liquid.

The immersion liquid used in the apparatus may have differentcompositions, according to the desired properties and the wavelength ofexposure radiation used. For an exposure wavelength of 193 nm, ultrapure water or water-based compositions may be used and for this reasonthe immersion liquid is sometimes referred to as water and water-relatedterms such as hydrophilic, hydrophobic, humidity, etc. may be used.

More generally, each step of the method may be executed on any generalcomputer, such as a mainframe computer, personal computer or the likeand pursuant to one or more, or a part of one or more, program modulesor objects generated from any programming language, such as C++, Java,Fortran or the like. And still further, each step, or a file or objector the like implementing each step, may be executed by special purposehardware or a circuit module designed for that purpose. For example, theinvention may be implemented as a firmware program loaded intonon-volatile storage or a software program loaded from or into a datastorage medium as machine-readable code, such code being instructionsexecutable by an array of logic elements such as a microprocessor orother digital signal processing unit.

The invention may be implemented as an article of manufacture comprisinga computer usable medium having computer readable program code meanstherein for executing the method steps of the invention, a programstorage device readable by a machine, tangibly embodying a program ofinstructions executable by a machine to perform the method steps of theinvention, a computer program product, or an article of manufacturecomprising a computer usable medium having computer readable programcode means therein, the computer readable program code means in saidcomputer program product comprising computer readable code means forcausing a computer to execute the steps of the invention. Such anarticle of manufacture, program storage device, or computer programproduct may include, but is not limited to, CD-ROMs, diskettes, tapes,hard drives, computer system memory (e.g. RAM or ROM) and/or theelectronic, magnetic, optical, biological or other similar embodiment ofthe program (including, but not limited to, a carrier wave modulated, orotherwise manipulated, to convey instructions that can be read,demodulated/decoded and executed by a computer). Indeed, the article ofmanufacture, program storage device or computer program product mayinclude any solid or fluid transmission medium, magnetic or optical, orthe like, for storing or transmitting signals readable by a machine forcontrolling the operation of a general or special purpose computeraccording to the method of the invention and/or to structure itscomponents in accordance with a system of the invention.

The invention may also be implemented in a system. A system may comprisea computer that includes a processor and a memory device and optionally,a storage device, an output device such as a video display and/or aninput device such as a keyboard or computer mouse. Moreover, a systemmay comprise an interconnected network of computers. Computers mayequally be in stand-alone form (such as the traditional desktop personalcomputer) or integrated into another apparatus (such as a lithographicapparatus).

The system may be specially constructed for the required purposes toperform, for example, the method steps of the invention or it maycomprise one or more general purpose computers as selectively activatedor reconfigured by a computer program in accordance with the teachingsherein stored in the computer(s). The system could also be implementedin whole or in part as a hard-wired circuit or as a circuitconfiguration fabricated into an application-specific integratedcircuit. The invention presented herein is not inherently related to aparticular computer system or other apparatus. The required structurefor a variety of these systems will appear from the description given.

In the case of diagrams depicted herein, they are provided by way ofexample. There may be variations to these diagrams or the steps (oroperations) described herein without departing from the spirit of theinvention. For instance, in certain cases, the steps may be performed indiffering order, or steps may be added, deleted or modified. All ofthese variations are considered to comprise part of the invention asrecited in the appended claims.

The descriptions above are intended to be illustrative, not limiting.Thus, it will be apparent to one skilled in the art that modificationsmay be made to the invention as described without departing from thescope of the claims set out below.

1. A method for correcting an exposure parameter of an immersionlithographic apparatus, the method comprising: measuring an exposureparameter using a measuring beam projected through a liquid between theprojection system and a table of the immersion lithographic apparatus;and determining an offset based on a change of a physical propertyimpacting a measurement made using the measuring beam to at least partlycorrect the measured exposure parameter, wherein the exposure parametercomprises a lateral placement of a patterned beam to be projected usingthe projection system, an X-Y position of a substrate held on the table,or both.
 2. The method according to claim 1, wherein the physicalproperty comprises (a) a temperature, or (b) a pressure, or (c) acomposition, or (d) any combination of (a)-(c), of the liquid.
 3. Themethod according to claim 1, wherein the physical property comprises (a)a temperature, or (b) a pressure, or (c) a composition, or (d) anycombination of (a)-(c), of a flushing gas, of or on an optical elementof the projection system, or both.
 4. The method according to claim 1,wherein the exposure parameter comprises a focus of a patterned beam tobe projected using the projection system, a height of the substrate heldon the table, or both.
 5. The method according to claim 1, wherein thephysical property comprises a wavelength of the measuring beam, awavelength of a patterned beam to be projected using the projectionsystem, or both.
 6. The method according to claim 1, comprisingprojecting the measuring beam and a patterned beam for the exposure ofthe substrate through an optical element of the projection system. 7.The method according to claim 1, wherein determining the offset based onthe change of the physical property comprises determining the offsetbased on the difference between the change of the physical property fora wavelength of the measuring beam and a change of the physical propertyfor a wavelength of a patterned beam to be projected using theprojection system.
 8. A method for correcting an exposure parameter ofan immersion lithographic apparatus, the method comprising: measuring anexposure parameter using a measuring beam projected through a liquidbetween the projection system and a table of the immersion lithographicapparatus; and determining an offset based on a change of a physicalproperty impacting a measurement made using the measuring beam to atleast partly correct the measured exposure parameter, wherein the offsetcomprises a multiplication of the change of the physical property and arate of change of the exposure parameter with respect to the physicalproperty.
 9. A computer program product for correcting an exposureparameter of an immersion lithographic apparatus, comprising: softwarecode configured to measure an exposure parameter using a measuring beamprojected through a liquid between the projection system and a table ofthe immersion lithographic apparatus; and software code configured todetermine an offset based on a change of a physical property impacting ameasurement made using the measuring beam to at least partly correct themeasured exposure parameter, wherein the exposure parameter comprises alateral placement of a patterned beam to be projected using theprojection system, an X-Y position of a substrate held on the table, orboth.
 10. The computer program product according to claim 9, wherein thephysical property comprises (a) a temperature, or (b) a pressure, or (c)a composition, or (d) any combination of (a)-(c), of the liquid.
 11. Thecomputer program product according to claim 9, wherein the physicalproperty comprises (a) a temperature, or (b) a pressure, or (c) acomposition, or (d) any combination of (a)-(c), of a flushing gas, of oron an optical element of the projection system, or both.
 12. Thecomputer program product according to claim 9, wherein the exposureparameter comprises a focus of a patterned beam to be projected usingthe projection system, a height of a substrate held on the table, orboth.
 13. The computer program product according to claim 9, wherein thephysical property comprises a wavelength of the measuring beam, awavelength of a patterned beam to be projected using the projectionsystem, or both.
 14. The computer program product according to claim 9,comprising software code configured to determine the offset based on thedifference between a change of the physical property for a wavelength ofthe measuring beam and a change of the physical property for awavelength of a patterned beam to be projected using the projectionsystem.
 15. A computer program product for correcting an exposureparameter of an immersion lithographic apparatus, comprising: softwarecode configured to measure an exposure parameter using a measuring beamprojected through a liquid between the projection system and a table ofthe immersion lithographic apparatus; software code configured todetermine an offset based on a change of a physical property impacting ameasurement made using the measuring beam to at least partly correct themeasured exposure parameter; and software code configured to determinethe offset by multiplication of the change of the physical property anda rate of change of the exposure parameter with respect to the physicalproperty.
 16. A method of correcting for an imaging error of animmersion lithographic apparatus, comprising: measuring a height of anoptical element of a projection system in the immersion lithographicapparatus, the optical element connected to a liquid between theprojection system and a table of the projection system; and at leastpartly correcting the image error by moving the optical element, movingthe table, or both, wherein measuring the height comprises detecting ameasuring beam that reflects from the optical element and evaluatingfringes created by interference between the measuring beam and a beamreflected from the table or a substrate held on the table.
 17. Themethod according to claim 16, wherein the imaging error is a focuserror, a spherical aberration, or both.
 18. The method according toclaim 16, wherein measuring the height comprises projecting a measuringbeam at the optical element and detecting a measuring beam travelingfrom the optical element.
 19. The method according to claim 16, whereinmeasuring the height is performed using a level sensor configured tomeasure a height of the table or a substrate held on the table.